Micron technology, inc. (20250118385). TESTING CIRCUIT FOR A MEMORY DEVICE

TESTING CIRCUIT FOR A MEMORY DEVICE

Organization Name

micron technology, inc.

Inventor(s)

Chunqiang Weng of Shanghai CN

Jingwei Cheng of Shanghai CN

TESTING CIRCUIT FOR A MEMORY DEVICE

This abstract first appeared for US patent application 20250118385 titled 'TESTING CIRCUIT FOR A MEMORY DEVICE

Original Abstract Submitted

methods, systems, and devices for testing circuit for a memory device are described. an apparatus may include a memory system including contacts that route signals to different regions of the memory system. the apparatus may include a first substrate including a memory system interface coupled with the memory system and a probe interface. the apparatus may also include a second substrate coupled with a host system interface of the first substrate and receive the signal of the memory system from the memory system interface. the first interface may route a signal of the memory system to the probe interface and a tester to determine the signal's integrity and any errors associated with the memory system. the first substrate may include a resistor coupled with the contacts of the memory system, the resistor on a surface of the interface may be configured to improve the signal at the tester.