Micron technology, inc. (20250089233). NITRIDE LATTICE SUPPORT IN MEMORY
NITRIDE LATTICE SUPPORT IN MEMORY
Organization Name
Inventor(s)
Yongjun J. Hu of Boise ID (US)
NITRIDE LATTICE SUPPORT IN MEMORY
This abstract first appeared for US patent application 20250089233 titled 'NITRIDE LATTICE SUPPORT IN MEMORY
Original Abstract Submitted
systems, methods and apparatus are provided for nitride lattice support structures and double side capacitors in vertical three-dimensional (3d) memory. an example method includes a method for forming a nitride lattice support structures for an array of vertically stacked memory cells having access devices and storage nodes. the method includes depositing alternating layers of a channel material and a first sacrificial material in repeating iterations to form a vertical stack on a substrate. the vertical stack can be patterned to form a plurality of elongated vertical columns separated by a plurality of first vertical opening. a second sacrificial material can be deposited to fill the first vertical openings and cover the vertical stack. a plurality of vertical openings and lateral recesses can be formed. a nitride material can be deposited in the vertical openings and lateral recesses to form a plurality of nitride lattice support structures.