Micron technology, inc. (20250087249). INTERCONNECTIONS FOR 3D MEMORY
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INTERCONNECTIONS FOR 3D MEMORY
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INTERCONNECTIONS FOR 3D MEMORY
This abstract first appeared for US patent application 20250087249 titled 'INTERCONNECTIONS FOR 3D MEMORY
Original Abstract Submitted
apparatuses and methods for interconnections for 3d memory are provided. one example apparatus can include a stack of materials including a plurality of pairs of materials, each pair of materials including a conductive line formed over an insulation material. the stack of materials has a stair step structure formed at one edge extending in a first direction. each stair step includes one of the pairs of materials. a first interconnection is coupled to the conductive line of a stair step, the first interconnection extending in a second direction substantially perpendicular to a first surface of the stair step.