Micron technology, inc. (20250017007). METHODS OF FORMING MICROELECTRONIC DEVICES
METHODS OF FORMING MICROELECTRONIC DEVICES
Organization Name
Inventor(s)
Shuangqiang Luo of Boise ID US
Nancy M. Lomeli of Boise ID US
METHODS OF FORMING MICROELECTRONIC DEVICES
This abstract first appeared for US patent application 20250017007 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES
Original Abstract Submitted
a method of forming a microelectronic device includes forming a microelectronic device structure. the microelectronic device structure includes a stack structure comprising insulative structures and electrically conductive structures vertically alternating with the insulative structures, pillar structures extending vertically through the stack structure, an etch stop material vertically overlaying the stack structure, and a first dielectric material vertically overlying the etch stop material. the method further includes removing portions of the first dielectric material, the etch stop material, and an upper region of the stack structure to form a trench interposed between horizontally neighboring groups of the pillar structures, forming a liner material within the trench, and substantially filling a remaining portion of the trench with a second dielectric material to form a dielectric barrier structure.
