Micron technology, inc. (20250015245). OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
Organization Name
Inventor(s)
Yongjun Jeff Hu of Boise ID US
John Mark Meldrim of Boise ID US
Everett Allen Mcteer of Eagle ID US
OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
This abstract first appeared for US patent application 20250015245 titled 'OHMIC CONTACTS FOR SEMICONDUCTOR STRUCTURES
Original Abstract Submitted
a composition and method for formation of ohmic contacts on a semiconductor structure are provided. the composition includes a tialnmaterial at least partially contiguous with the semiconductor structure. the tialnmaterial can be tial. the composition can include an aluminum material, the aluminum material being contiguous to at least part of the tialnmaterial, such that the tialnmaterial is between the aluminum material and the semiconductor structure. the method includes annealing the composition to form an ohmic contact on the semiconductor structure.