Micron technology, inc. (20250014654). ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE
ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE
Organization Name
Inventor(s)
Patrick R. Khayat of San Diego CA US
Hyungseok Kim of Santa Clara CA US
Steven Michael Kientz of Westminster CO US
ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE
This abstract first appeared for US patent application 20250014654 titled 'ADAPTIVE TEMPERATURE COMPENSATION FOR A MEMORY DEVICE
Original Abstract Submitted
a system includes a memory device; and a processing device, operatively coupled to the memory device, the processing device to perform operations including: receiving a request to perform a read operation, the request identifying a set of memory cells in a portion of a memory device; determining a first temperature of the set of memory cells, wherein the first temperature is associated with a first error handing operation of an error handling flow directed to the set of memory cells; determining an offset value to be applied to a temperature compensation coefficient of a parameter of a set of parameters associated with the set of memory cells, wherein the offset value is associated with a temperature range comprising the first temperature; determining a second temperature of the set of memory cells, wherein the second temperature is associated with a second error handling operation following the first error handing operation of the error handling flow directed to the set of memory cells; and responsive to determining that the second temperature falls in the temperature range comprising the first temperature, adjusting, based on the offset value, a temperature compensation value used in the second error handling operation.
