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Micron technology, inc. (20250006236). MEMORY ROW-HAMMER MITIGATION

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MEMORY ROW-HAMMER MITIGATION

Organization Name

micron technology, inc.

Inventor(s)

Bryan David Kerstetter of Kuna ID US

Alan J. Wilson of Boise ID US

Donald Martin Morgan of Meridian ID US

MEMORY ROW-HAMMER MITIGATION

This abstract first appeared for US patent application 20250006236 titled 'MEMORY ROW-HAMMER MITIGATION

Original Abstract Submitted

methods, systems, and devices for memory row-hammer mitigation are described. a memory device may operate based on a scheme that is continuous across power cycles. for example, the memory device may access a region if a value of a counter does not satisfy a threshold value and may access the region if a value of the counter satisfies the threshold value. upon transitioning power states, the value of the counter may be stored to a non-volatile memory such that it may be accessed when transitioning back to the original power state (e.g., an “on” state). accordingly, the value of the counter may be maintained across power cycles.

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