Micron technology, inc. (20240425983). METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION

METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION

Organization Name

micron technology, inc.

Inventor(s)

Jean-Sebastien Materne Lehn of Boise ID (US)

Francois H. Fabreguette of Boise ID (US)

Timothy A. Quick of Boise ID (US)

METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION

This abstract first appeared for US patent application 20240425983 titled 'METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION

Original Abstract Submitted

methods, systems, and devices for methods for depositing silicon films by atomic layer deposition are described. for instance, a device may expose a base material (e.g., multiple stacks of materials) to a first precursor to form a silicon compound on the base material, the first precursor including a silicon amidinate. the device may react a second precursor with the silicon compound and may form a layer of silicon on the base material based on exposing the base material to the first precursor and reacting the second precursor with the silicon compound.