Micron technology, inc. (20240411466). MEMORY DEVICE SECURITY AND ROW HAMMER MITIGATION

MEMORY DEVICE SECURITY AND ROW HAMMER MITIGATION

Organization Name

micron technology, inc.

Inventor(s)

Yang Lu of Boise ID (US)

Sujeet Ayyapureddi of Boise ID (US)

Edmund J. Gieske of Cedar Park TX (US)

Cagdas Dirik of Indianola WA (US)

Ameen D. Akel of Rancho Cordova CA (US)

Elliott C. Cooper-balis of San Jose CA (US)

Amitava Majumdar of Boise ID (US)

Robert M. Walker of Raleigh NC (US)

Danilo Caraccio of Milano (IT)

MEMORY DEVICE SECURITY AND ROW HAMMER MITIGATION

This abstract first appeared for US patent application 20240411466 titled 'MEMORY DEVICE SECURITY AND ROW HAMMER MITIGATION

Original Abstract Submitted

systems, methods, and apparatus for memory device security and row hammer mitigation are described. a control mechanism may be implemented in a front-end and/or a back-end of a memory sub-system to refresh rows of the memory. a row activation command having a row address at control circuitry of a memory sub-system and incrementing a first count of a row counter corresponding to the row address stored in a content addressable memory (cam) of the memory sub-system may be received. control circuitry may determine whether the first count is greater than a row hammer threshold (rht) minus a second count of a cam decrease counter (cdc); the second count may be incremented each time the cam is full. a refresh command to the row address may be issued when a determination is made that the first count is greater than the rht minus the second count.