Micron technology, inc. (20240320153). ENHANCED DATA RELIABILITY IN MULTI-LEVEL MEMORY CELLS simplified abstract
ENHANCED DATA RELIABILITY IN MULTI-LEVEL MEMORY CELLS
Organization Name
Inventor(s)
David Aaron Palmer of Boise ID (US)
ENHANCED DATA RELIABILITY IN MULTI-LEVEL MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240320153 titled 'ENHANCED DATA RELIABILITY IN MULTI-LEVEL MEMORY CELLS
Simplified Explanation
The patent application describes methods, systems, and devices for improving data reliability in multi-level memory cells. It involves generating and transmitting data sets for write operations and extracting and validating data sets for read operations.
- Host device identifies data to be stored in memory cells
- Generates a second set of data if the first set is smaller than the storage capacity
- Transmits write command with both data sets to memory device
- Memory device extracts and validates data sets for read operations
Key Features and Innovation
- Enhanced data reliability in multi-level memory cells
- Efficient data storage and retrieval processes
- Improved validation of data sets
- Optimization of storage capacity in memory cells
Potential Applications
- Solid-state drives
- Flash memory devices
- Embedded systems
- Data storage solutions
Problems Solved
- Data corruption in multi-level memory cells
- Inefficient data storage practices
- Limited storage capacity utilization
Benefits
- Increased data reliability
- Enhanced data storage efficiency
- Improved data validation processes
Commercial Applications
The technology can be applied in various commercial sectors such as data storage, consumer electronics, and embedded systems. It can improve the performance and reliability of storage devices, leading to better user experiences and increased data integrity.
Questions about the Technology
How does this technology improve data reliability in multi-level memory cells?
This technology enhances data reliability by optimizing data storage processes and improving data validation mechanisms.
What are the potential applications of this technology beyond memory cells?
This technology can be applied in various sectors such as solid-state drives, flash memory devices, and embedded systems to enhance data storage efficiency and reliability.
Original Abstract Submitted
methods, systems, and devices for enhanced data reliability in multi-level memory cells are described. for a write operation, a host device may identify a first set of data to be stored by a set of memory cells at a memory device. based on a quantity of bits within the first set of data being less than a storage capacity of the set of memory cells, the host device may generate a second set of data and transmit a write command including the first and second sets of data to the memory device. for a read operation, the host device may receive a first set of data from the memory device in response to transmitting a read command. the memory device may extract a second set of data from the first set of data and validate a portion of the first set of data using the second set of data.