Micron technology, inc. (20240320077). ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION simplified abstract
ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION
Organization Name
Inventor(s)
Charles See Yeung Kwong of Redwood City CA (US)
Seungjune Jeon of Santa Clara CA (US)
Zhenming Zhou of San Jose CA (US)
ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240320077 titled 'ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION
Simplified Explanation
The patent application involves identifying the first block of a set of blocks in a memory device, determining the die where the block is located, selecting a threshold value for reliability, and performing a program operation on a second block when the endurance metric value matches the threshold value.
Key Features and Innovation
- Identification of specific blocks in a memory device.
- Selection of threshold values for projected reliability metrics.
- Program operations based on matching endurance metric values.
Potential Applications
This technology can be applied in various memory devices to optimize program operations and enhance reliability metrics.
Problems Solved
This technology addresses the need for efficient block identification and program operations in memory devices, improving overall reliability.
Benefits
- Enhanced reliability in memory devices.
- Optimized program operations for improved performance.
- Efficient block management for better memory device functionality.
Commercial Applications
Title: Advanced Memory Device Optimization Technology This technology can be utilized in the manufacturing of memory devices for consumer electronics, data storage systems, and other applications requiring reliable and efficient memory operations.
Prior Art
Readers can explore prior research on memory device optimization, block management, and reliability metrics in the field of semiconductor technology.
Frequently Updated Research
Stay updated on the latest advancements in memory device optimization, reliability metrics, and program operations in semiconductor technology.
Questions about Memory Device Optimization
What are the key benefits of optimizing memory device operations?
Optimizing memory device operations leads to improved performance, enhanced reliability, and efficient block management, resulting in better overall functionality.
How does selecting threshold values for reliability metrics impact memory device operations?
Selecting threshold values helps in determining the projected reliability of memory devices and enables efficient program operations based on endurance metrics.
Original Abstract Submitted
a first blocks of a set of blocks of a memory device is identified. a die on which the first block resides is identified among a plurality of dies of the memory device. a threshold value associated with the die is selected from a range associated with a projected reliability metric of the die. responsive to determining that an endurance metric value associated with the die matches the threshold value, a program operation is performed with respect to a second block of the set of blocks.