LATERAL SPLIT DIGIT LINE MEMORY ARCHITECTURES

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LATERAL SPLIT DIGIT LINE MEMORY ARCHITECTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240284659 titled 'LATERAL SPLIT DIGIT LINE MEMORY ARCHITECTURES

Simplified Explanation: The patent application describes methods, systems, and devices for lateral split digit line memory architectures, where a memory array includes word line plates separated by pillars that interact with the plates. Dielectric piers are positioned between the pillars, and storage elements and digit lines are coupled with the pillars and plates.

Key Features and Innovation:

Memory array with lateral split digit line architecture
Word line plates separated by pillars
Dielectric piers positioned between pillars
Storage elements and digit lines coupled with pillars and plates

Potential Applications: This technology could be applied in various memory storage devices, such as solid-state drives, computer memory modules, and other electronic devices requiring high-speed data access.

Problems Solved: This technology addresses the need for efficient memory architectures that can enhance data storage and retrieval speed in electronic devices.

Benefits:

Improved data access speed
Enhanced memory storage capacity
Efficient memory architecture design

Commercial Applications: Potential commercial applications include the development of faster and more efficient memory storage devices for consumer electronics, data centers, and other computing systems.

Prior Art: Readers can explore prior art related to memory architecture design, semiconductor technologies, and data storage systems to understand the evolution of similar innovations in the field.

Frequently Updated Research: Researchers may find updated studies on memory architecture advancements, semiconductor materials, and data storage technologies relevant to this innovation.

Questions about Lateral Split Digit Line Memory Architectures: 1. How does the lateral split digit line architecture improve memory performance compared to traditional designs? 2. What are the potential challenges in implementing this technology in large-scale memory arrays?

Original Abstract Submitted

methods, systems, and devices for lateral split digit line memory architectures are described. a memory array may include a first set of word line plates separated from a second set of word line plates by a pillar (e.g., that is configured as a digit line) that interact with the first and second set of word line plates. further, the memory array may include a set of dielectric piers that are positioned between the pillars, where each dielectric pier contacts a first pillar and a second pillar. additionally, the memory array may include a set of storage elements and a set of digit lines that are each coupled with a word line plate, a pillar, and a dielectric material that is positioned between each first and second pillar of the pairs of pillars.