Micron technology, inc. (20240250024). CHOPLESS FLOW FOR STAIRLESS ELECTRICAL INTERCONNECT STRUCTURE simplified abstract

CHOPLESS FLOW FOR STAIRLESS ELECTRICAL INTERCONNECT STRUCTURE

Organization Name

micron technology, inc.

Inventor(s)

Surendranath C. Eruvuru of Boise ID (US)

Lifang Xu of Boise ID (US)

CHOPLESS FLOW FOR STAIRLESS ELECTRICAL INTERCONNECT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240250024 titled 'CHOPLESS FLOW FOR STAIRLESS ELECTRICAL INTERCONNECT STRUCTURE

The abstract describes a patent application for a stairless electrical interconnect structure with contact pillars embedded within a periodic material stack to provide electrical connections to access lines associated with a three-dimensional memory array.

• Contact pillars are formed in a corresponding array of vertical contact pillar trenches etched into the material stack in two stages.
• Depths of the trenches vary between columns by a fixed number of tiers and are offset between rows.

Potential Applications: - Three-dimensional memory arrays - Integrated circuit manufacturing - High-density electronic devices

Problems Solved: - Simplifies the electrical interconnection process in complex structures - Enables efficient access to multiple tiers in a material stack

Benefits: - Improved electrical connectivity in three-dimensional structures - Enhanced performance and reliability of electronic devices

Commercial Applications: - Semiconductor industry for memory devices - Electronics manufacturing for high-density components - Research and development in advanced electronic systems

Questions about the technology: 1. How does the design of the contact pillars improve the efficiency of accessing multiple tiers in a material stack? 2. What are the potential challenges in implementing this stairless electrical interconnect structure in commercial electronic devices?

Frequently Updated Research: - Ongoing research in semiconductor manufacturing techniques for improving electrical interconnectivity in complex structures.

Original Abstract Submitted

a stairless electrical interconnect structure with contact pillars embedded within and collectively accessing each tier in a periodic material stack, e.g., to provide electrical connections to access lines associated with a three-dimensional memory array, is described. the contact pillars can be formed in a corresponding array of vertical contact pillar trenches etched into the material stack in two stages to create depths of the trenches that vary between columns by a fixed number of tiers and then offset the depths between rows.