Micron technology, inc. (20240242939). PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION simplified abstract
PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION
Organization Name
Inventor(s)
Chao Lin Lee of Singapore (SG)
Rachmat Wibowo of Singapore (SG)
SAMUEL Siswanto of Singapore (SG)
PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240242939 titled 'PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION
The patent application describes methods, systems, and devices for plasma-assisted film removal for wafer fabrication. In-situ techniques are provided for removing a film from a select portion of a wafer, such as a surrounding bevel edge, after forming a film on the wafer using chemical vapor deposition (CVD). A combination of gases is ejected from a gas fixture and directed to different portions of the wafer, reacting to selectively remove the film from the bevel edge while maintaining the film on other parts of the wafer.
- Plasma-assisted film removal for wafer fabrication
- In-situ techniques for removing film from select portions of a wafer
- Use of chemical vapor deposition (CVD) to form a film on the wafer
- Ejection of a combination of gases to selectively remove the film from the bevel edge
- Maintaining the film on other portions of the wafer
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Thin film deposition processes
Problems Solved: - Efficient removal of films from specific areas of wafers - Precision in film removal without damaging other parts of the wafer
Benefits: - Improved wafer fabrication processes - Enhanced control over film removal - Reduction in production costs
Commercial Applications: Plasma-assisted film removal technology can be utilized in semiconductor fabrication facilities, microelectronics manufacturing plants, and research institutions conducting thin film deposition processes.
Questions about Plasma-assisted Film Removal for Wafer Fabrication: 1. How does plasma-assisted film removal compare to traditional methods of film removal in wafer fabrication? 2. What are the potential environmental impacts of using plasma-assisted film removal technology in semiconductor manufacturing processes?
Original Abstract Submitted
methods, systems, and devices for plasma-assisted film removal for wafer fabrication are described. the present disclosure provides in-situ techniques for removing a film from a select portion of a wafer, such as a surrounding bevel edge. after forming a film on the wafer using chemical vapor deposition (cvd), the wafer may be raised to a higher position in the chamber for cvd. a combination of gases may be ejected from a gas fixture and directed, respectively, to different portions of the wafer. the combination of gases may react to selectively remove the film from the bevel edge of the wafer and maintain the film on other portions of the wafer.
