Micron technology, inc. (20240242774). TRACKING CHARGE LOSS IN MEMORY SUB-SYSTEMS simplified abstract
TRACKING CHARGE LOSS IN MEMORY SUB-SYSTEMS
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TRACKING CHARGE LOSS IN MEMORY SUB-SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240242774 titled 'TRACKING CHARGE LOSS IN MEMORY SUB-SYSTEMS
The patent application describes a system involving a memory device and a processing device that work together to compute an adjustment value for a threshold voltage offset associated with a block family of the memory device. The system then determines if this adjustment value meets a specific threshold voltage criterion based on known valley margins of the memory device and updates the threshold voltage offset accordingly.
- Memory device and processing device collaborate to compute and adjust threshold voltage offset.
- System checks if adjustment value meets a threshold voltage criterion based on known valley margins.
- Threshold voltage offset is updated based on the evaluation.
Potential Applications: - Memory devices in electronic devices - Data storage systems - Semiconductor industry
Problems Solved: - Ensuring optimal performance of memory devices - Maintaining data integrity in storage systems
Benefits: - Improved reliability and efficiency of memory devices - Enhanced data storage capabilities - Better performance in electronic devices
Commercial Applications: Title: "Enhancing Memory Device Performance through Threshold Voltage Adjustment" This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Semiconductor manufacturing companies
Prior Art: Readers can explore prior research on memory device optimization, semiconductor manufacturing, and data storage technologies to understand the background of this innovation.
Frequently Updated Research: Stay informed about the latest advancements in memory device optimization, semiconductor industry trends, and data storage innovations to enhance your knowledge in this field.
Questions about Memory Device Optimization: 1. How does adjusting the threshold voltage offset impact the performance of memory devices? Adjusting the threshold voltage offset can optimize the reliability and efficiency of memory devices by ensuring data integrity and enhancing overall performance.
2. What are the potential challenges in implementing threshold voltage adjustment in memory devices? Implementing threshold voltage adjustment may require thorough testing and calibration to ensure compatibility with different memory device configurations and applications.
Original Abstract Submitted
disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include computing an adjustment value of a threshold voltage offset associated with a block family of the memory device; determining that the adjustment value satisfies a threshold voltage criterion, wherein the threshold voltage criterion comprises a reference voltage level corresponding to known valley margins of the memory device; and updating the threshold voltage offset.