Kioxia corporation (20250095743). SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Tatsuo Ogura of Yokkaichi Mie JP
Masaki Kondo of Yokkaichi Mie JP
Takashi Maeda of Kamakura Kanagawa JP
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 20250095743 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
a semiconductor memory device includes: a first conductive layer; and a second conductive layer adjacent to the first conductive layer. write loops each include: a first program operation that applies the first conductive layer with a program voltage and applies a bit line with a first bit line voltage; and a second program operation that applies the first conductive layer with the program voltage and applies the bit line with a second bit line voltage larger than the first bit line voltage. the write operation includes a state judging operation that judges whether a memory cell corresponding to the semiconductor layer and the second conductive layer has been controlled to a low-state, or not. when the memory cell has been controlled to the low-state, the first program operation is executed, and when the memory cell has not been controlled to the low-state, the second program operation is executed.