Kabushiki kaisha toshiba (20250107125). SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Kazutoshi Nakamura of Nonoichi Ishikawa JP

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 20250107125 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

a semiconductor device of embodiments includes a transistor region and a diode region. the transistor region includes: a first conductive type first semiconductor region, a second conductive type second semiconductor region, a first conductive type third semiconductor region in this order in a semiconductor layer; a second conductive type fourth semiconductor region and a first conductive type fifth semiconductor region on the third semiconductor region and arranged alternately in a first direction; a first conductive type sixth semiconductor region between the third and the fourth semiconductor region a first trench spaced from the sixth semiconductor region; a gate electrode in the first trench; a first electrode having a first portion, a bottom surface of the first portion being in contact with the third semiconductor region and side surfaces of the first portion being in contact with the fourth, the fifth, and the sixth semiconductor regions; and a second electrode.