Kabushiki kaisha toshiba (20250089283). SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Tatsuo Shimizu of Shinagawa Tokyo (JP)
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250089283 titled 'SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device manufacturing method of embodiments includes: forming a mask material having openings on a surface of a silicon carbide layer; performing first processing for implanting at least one substance selected from a group consisting of hydrogen (h), helium (he), and electrons into a first region of the silicon carbide layer by using the mask material as a mask; performing a first ion implantation for implanting p-type impurities into a second region shallower than the first region by using the mask material as a mask before the first processing or after the first processing; removing the mask material after the first processing and the first ion implantation; and performing a first heat treatment at a temperature equal to or more than 1600� c. after removing the mask material.