Japan display inc. (20250113625). RADIATION DETECTOR
RADIATION DETECTOR
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RADIATION DETECTOR
This abstract first appeared for US patent application 20250113625 titled 'RADIATION DETECTOR
Original Abstract Submitted
a radiation detector according to an embodiment of the present invention includes: a transistor in which an oxide semiconductor layer is used in a channel of the transistor; a photoelectric converting layer connected to the transistor; a wavelength converting layer facing the photoelectric converting layer and capable of emitting visible light based on radioactive rays absorbed by the wavelength converting layer; and an oxide layer in contact with the oxide semiconductor layer between the transistor and the photoelectric converting layer, wherein a thickness of the oxide layer is 50 nm or less.