Japan display inc. (20250113618). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hajime Watakabe of Minato-ku JP
Masashi Tsubuku of Minato-ku JP
Masahiro Watabe of Minato-ku JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250113618 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device according to an embodiment of the present invention includes: a first semiconductor layer; a first gate electrode; a first gate insulating layer; a first insulating layer above the first gate electrode; a first electrode overlapping the first semiconductor layer, and electrically connected to the first semiconductor layer; a second semiconductor layer above the first insulating layer and made of a different material from the first semiconductor layer; a second gate electrode; a second gate insulating layer; a second electrode overlapping the second semiconductor layer, and electrically connected to the second semiconductor layer; and a first metal nitride layer between the second semiconductor layer and the second electrode, wherein the second semiconductor layer is polycrystalline, and an etching rate of the second semiconductor layer with respect to an etchant including phosphoric acid as a main component is less than 3 nm/min at 40� c.