Japan display inc. (20250113542). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250113542 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device comprises a first insulating layer; an oxide semiconductor layer having a polycrystalline structure on the first insulating layer; a gate insulating layer on the semiconductor oxide layer; a buffer layer on the gate insulating layer; a gate wiring on the buffer layer; and a second insulating layer on the gate wiring. the oxide semiconductor layer has a first region, a second region and a third region aligned toward a first direction. an electrical resistivity of the second region is higher than an electrical resistivity of the first region and lower than an electrical resistivity of the third region. a sheet resistance of the third region is less than 1000 ohm/square.