Japan display inc. (20250015196). THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
This abstract first appeared for US patent application 20250015196 titled 'THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
Original Abstract Submitted
a thin film transistor includes a metal oxide layer over the substrate, an oxide semiconductor layer having crystallinity in contact with the metal oxide layer, a gate electrode overlapping the oxide semiconductor layer, and an insulating layer between the oxide semiconductor layer and the gate electrode. the oxide semiconductor layer includes a plurality of crystal grains. each of the plurality of crystal grains includes at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111> obtained by an ebsd method. in occupancy rates of crystal orientations calculated based on measurement points having crystal orientations with a crystal orientation difference greater than or equal to 0 degrees and less than or equal to 15 degrees with respect to a normal direction of a surface of the substrate, an occupancy rate of the crystal orientation <001> is less than or equal to 5%.