Japan Display Inc. patent applications on April 3rd, 2025

Patent Applications by Japan Display Inc. on April 3rd, 2025

Japan Display Inc.: 21 patent applications

Japan Display Inc. has applied for patents in the areas of H01L29/786 (8), G02F1/13357 (5), H01L27/12 (5), G02F1/1335 (4), G02F1/1368 (4) H10D86/60 (4), H10D30/6755 (3), G01V3/088 (1), G02B6/0036 (1), G02B27/0101 (1)

With keywords such as: layer, semiconductor, electrode, oxide, display, gate, light, insulating, device, and region in patent application abstracts.

Patent Applications by Japan Display Inc.

20250110251. DETECTION DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hiroshi YAMAGUCHI of Tokyo JP for japan display inc.

IPC Code(s): G01V3/08, G06F3/044, H03H11/04

CPC Code(s): G01V3/088

Abstract: a detection device includes: a detector including first electrodes and second electrodes disposed around a the first electrodes; a detection circuit configured to detect proximity of an external object to the detector; a power circuit configured to generate a square wave; and a filter that is coupled to the power circuit through an isolator and configured to receive the square wave transmitted through the isolator. the filter includes a low-pass filter circuit and a digital potentiometer. a periodically oscillating potential based on output from the filter is provided as a reference potential of the power circuit and provided to the second electrodes. a reference potential of the filter is a fixed potential. the power circuit can change the frequency of the generated square wave. the filter can change the frequency of the periodically oscillating potential in accordance with an electric resistance value of the digital potentiometer.

20250110267. DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Kentaro OKUYAMA of Tokyo JP for japan display inc., Yuuji OOMORI of Tokyo JP for japan display inc., Makoto MIYAO of Tokyo JP for japan display inc.

IPC Code(s): F21V8/00, G02F1/13357

CPC Code(s): G02B6/0036

Abstract: according to one embodiment, a display device includes a display panel, a transparent substrate, a fixing member, and a first light source unit. the transparent substrate has a first main face, a first incident face which is a first side face in contact with the first main face at a first edge, and a first non-incident face which is a second side face in contact with the first main face at a second edge. a shape of the first incident face and a shape of the first non-incident face are different from each other.

20250110335. HEAD-UP DISPLAY_simplified_abstract_(japan display inc.)

Inventor(s): Kazunari TOMIZAWA of Tokyo JP for japan display inc., Chikyu NAKAOKA of Tokyo JP for japan display inc., Takeo KOITO of Tokyo JP for japan display inc.

IPC Code(s): G02B27/01

CPC Code(s): G02B27/0101

Abstract: according to an aspect, a head-up display causes an image reflected by a light transmitting member to be superimposed on a real image transmitted by the light transmitting member and causes the superimposed image to be visually recognized as a virtual image by an viewer. the head-up display includes a display device and a magnification optical system. the display device includes a backlight, a first image display panel that receives direct light from the backlight, and a second image display panel that is disposed with a gap between the second image display panel and the first image display panel and receives light transmitted by the first image display panel. the first image display panel includes a first polarizer provided between the first image display panel and the backlight. the second image display panel includes a second polarizer provided between the second image display panel and the magnification optical system.

20250110364. DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Kentaro OKUYAMA of TOKYO JP for japan display inc., Kojiro IKEDA of TOKYO JP for japan display inc., Tenfu NAKAMURA of TOKYO JP for japan display inc., Chiharu KABURAGI of TOKYO JP for japan display inc.

IPC Code(s): G02F1/1335, G02F1/13357, G02F1/1343

CPC Code(s): G02F1/133502

Abstract: according to one embodiment, a display device includes a display panel. a second substrate of the display panel includes a transparent first basement, a transparent conductive layer, a metal line, and a first optical layer. the transparent conductive layer is located between a first main surface of the first basement and a liquid crystal layer of the display panel. the metal line is located between the first main surface and the transparent conductive layer and is in contact with the transparent conductive layer. the first optical layer is located between the first main surface and the transparent conductive layer, made to overlap with the metal line, and has a refractive index lower than a refractive index of the first basement.

20250110366. DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Shuichi OSAWA of Tokyo JP for japan display inc.

IPC Code(s): G02F1/1335, G02F1/1345

CPC Code(s): G02F1/133514

Abstract: a display device includes a display panel including a pixel and a drive circuit configured to drive the pixel, a light source device configured to emit emitted light toward the display panel, a color separation element placed between the display panel and the light source device, the color separation element being configured to disperse the emitted light and to emit, to the pixel, a plurality of rays of separated light with wavelengths different from each other, and a light-shielding member placed in the display panel, the light-shielding member being configured to block the emitted light heading toward the drive circuit.

20250110367. DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Yoshinori TANAKA of Tokyo JP for japan display inc., Keita ONO of Tokyo JP for japan display inc., Keiji TAGO of Tokyo JP for japan display inc.

IPC Code(s): G02F1/1335, G02F1/1333, G02F1/1334, G02F1/13357

CPC Code(s): G02F1/133553

Abstract: according to one embodiment, a display device includes a display panel including a first end portion and a second end portion located on a side opposite to the first end portion, a first light source emitting light to the first end portion, and a first reflective member. the display panel includes an array substrate, a counter-substrate opposed to the array substrate, and a liquid crystal layer provided between the array substrate and the counter-substrate. the array substrate has a first end face which is located in the first end portion and on which the first reflective member is provided.

20250110368. LIQUID CRYSTAL DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Masafumi OKADA of Tokyo JP for japan display inc., Ken KAGABU of Tokyo JP for japan display inc.

IPC Code(s): G02F1/13357, F21V8/00, G02F1/1333, G02F1/1343, G02F1/1368

CPC Code(s): G02F1/1336

Abstract: the invention relates to a transparent liquid crystal display device. the configuration is as follows. a display area is formed in a portion where a tft substrate and an opposing substrate overlap, a terminal area is formed in a portion of the tft substrate that does not overlap with the opposing substrate, and a cover glass is arranged over the tft substrate or the opposing substrate; a first side surface of a light guide plate contacts the terminal side of the cover glass, a second side surface of the light guide plate, which is opposite to the first side surface, is arranged with a plurality of leds, a first lens is formed on the first side surface, and a round prism is formed on the second side surface. a pitch of round prisms in a first direction is larger than a width of the round prism in the first direction.

20250110370. LIQUID CRYSTAL DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Takashi OTA of Tokyo JP for japan display inc., Michihide SHIBATA of Tokyo JP for japan display inc., Toshihiro YAJIMA of Tokyo JP for japan display inc.

IPC Code(s): G02F1/13357, G02F1/1335

CPC Code(s): G02F1/133605

Abstract: a task of the present invention is to realize a display device with high definition and high contrast by means of local dimming. the configuration is as follows. a liquid crystal display device including a display panel and a back light, the back light having a light source and a group of optical sheets, the light source including a light source substrate and leds arranged on the light source substrate, the light source being divided into segments in a plan view, the segment including at least one led, characterized in that the segment is surrounded by a stacked structure of a lower reflection wall and an upper reflection wall.

20250113116. DETECTION DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Gen KOIDE of Tokyo JP for japan display inc.

IPC Code(s): H04N25/772, H04N25/78, H10K39/34, H10K39/38

CPC Code(s): H04N25/772

Abstract: according to an aspect, a detection device includes: an optical sensor; a light source configured to emit light to the optical sensor; a detection signal amplifying circuit configured to convert a variation of current supplied from the optical sensor into a variation of voltage; and an analog-to-digital (a/d) conversion circuit configured to convert an output voltage signal after being converted into the voltage variation into a digital detection value. the a/d conversion circuit is configured to limit the detection value to a maximum digital gradation value or a minimum digital gradation value when the light source is off.

20250113535. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of TOKYO JP for japan display inc., Masashi TSUBUKU of TOKYO JP for japan display inc., Toshinari SASAKI of TOKYO JP for japan display inc., Takaya TAMARU of TOKYO JP for japan display inc., Marina MOCHIZUKI of TOKYO JP for japan display inc., Masahiro WATABE of TOKYO JP for japan display inc.

IPC Code(s): H01L29/786

CPC Code(s): H10D30/6723

Abstract: a semiconductor device includes a light shielding layer, a first silicon nitride insulating layer in contact with the light shielding layer with a first interface, a first silicon oxide insulating layer in contact with the first silicon nitride layer with a second interface, and an oxide semiconductor layer over the first silicon oxide insulating layer. the first silicon oxide insulating layer is in contact with the second silicon oxide insulating layer. a thickness t of the first silicon nitride layer satisfies a condition in which light reflected at the first interface and light reflected at the second interface weaken each other when light having a wavelength of 450 nm is incident on the first silicon nitride insulating layer at an angle of 60 degrees from a normal direction of the second interface.

20250113542. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Kentaro MIURA of Tokyo JP for japan display inc., Akihiro HANADA of Tokyo JP for japan display inc., Takaya TAMARU of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H01L29/786

CPC Code(s): H10D30/6755

Abstract: a semiconductor device comprises a first insulating layer; an oxide semiconductor layer having a polycrystalline structure on the first insulating layer; a gate insulating layer on the semiconductor oxide layer; a buffer layer on the gate insulating layer; a gate wiring on the buffer layer; and a second insulating layer on the gate wiring. the oxide semiconductor layer has a first region, a second region and a third region aligned toward a first direction. an electrical resistivity of the second region is higher than an electrical resistivity of the first region and lower than an electrical resistivity of the third region. a sheet resistance of the third region is less than 1000 ohm/square.

20250113543. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Kentaro MIURA of Tokyo JP for japan display inc., Akihiro HANADA of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H01L29/786, H01L29/423

CPC Code(s): H10D30/6755

Abstract: a semiconductor device according to an embodiment of the present invention includes an oxide semiconductor layer having a polycrystalline structure and including an impurity region containing an impurity element, a gate electrode over the oxide semiconductor layer, an insulating layer between the oxide semiconductor layer and the gate electrode, a first contact hole penetrating the insulating layer and exposing the impurity region, a second contact hole penetrating at least the insulating layer and having a greater depth than the first contact hole, and a connection wiring electrically connecting the impurity region to a layer which is exposed in the second contact hole through the first contact hole and the second contact hole. the connection wiring includes a first conductive layer and a second conductive layer on the first conductive layer. a portion of the first conductive layer that is exposed from the second conductive layer contains the impurity element.

20250113544. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Kentaro MIURA of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H01L29/786, H01L29/423, H01L29/49

CPC Code(s): H10D30/6755

Abstract: a semiconductor device according to an embodiment of the present invention includes: an oxide semiconductor layer; a first gate electrode facing the oxide semiconductor layer; a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; an electrode arranged in a region overlapping the oxide semiconductor layer in a plan view and electrically connected to the oxide semiconductor layer; and a metal nitride layer between the oxide semiconductor layer and the electrode, wherein the oxide semiconductor layer is polycrystalline, and an etching rate of the oxide semiconductor layer with respect to an etchant containing phosphoric acid as a main component is less than 3 nm/min at 40� c.

20250113546. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Kentaro MIURA of Tokyo JP for japan display inc., Takeshi SAKAI of Tokyo JP for japan display inc., Akihiro HANADA of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H01L29/786, H01L29/417, H01L29/423

CPC Code(s): H10D30/6756

Abstract: a semiconductor device includes a gate electrode, an oxide semiconductor layer having a polycrystalline structure, and a gate insulating layer between the gate electrode and the oxide semiconductor layer. the oxide semiconductor layer includes a source region and a drain region each containing an impurity element, a channel region between the source region and the drain region, and a first region adjacent to the channel region. the first region includes a first edge extending along a first direction travelling from the source region to the drain region. the first region has a higher electrical resistivity than each of the source region and the drain region. an etching rate of the oxide semiconductor layer is less than 3 nm/min when the oxide semiconductor layer is etched using an etching solution containing phosphoric acid as a main component at 40� c.

20250113616. DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Akihiro HANADA of Tokyo JP for japan display inc., Takuo KAITOH of Tokyo JP for japan display inc., Motochika YUKAWA of Tokyo JP for japan display inc.

IPC Code(s): H01L27/12, G02F1/1368

CPC Code(s): H10D86/60

Abstract: a display device includes an oxide semiconductor layer including a polycrystalline structure, a gate insulating layer provided on the oxide semiconductor layer, a gate electrode opposite to the oxide semiconductor layer on the gate insulating layer, a first silicon nitride layer provided in contact with the gate electrode, a source wiring provided in contact with the first silicon nitride layer and electrically connected to the oxide semiconductor layer, a second silicon nitride layer provided in contact with the source wiring and the first silicon nitride layer, a first transparent conductive layer provided in contact with the second silicon nitride layer and electrically connected to the oxide semiconductor layer, and a third silicon nitride layer provided in contact with the first transparent conductive layer and the second silicon nitride layer, wherein a channel length of the gate electrode is 2.0 �m or less.

20250113617. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Akihiro HANADA of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H01L27/12, G02F1/1362, G02F1/1368, H01L29/786

CPC Code(s): H10D86/60

Abstract: a semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. in a plan view, the second gate electrode is located with a space from each of the source electrode and the drain electrode. the second gate electrode is electrically connected to the first gate electrode.

20250113618. SEMICONDUCTOR DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Minato-ku JP for japan display inc., Masashi TSUBUKU of Minato-ku JP for japan display inc., Kentaro MIURA of Minato-ku JP for japan display inc., Masahiro WATABE of Minato-ku JP for japan display inc.

IPC Code(s): H01L27/12, H01L29/786

CPC Code(s): H10D86/60

Abstract: a semiconductor device according to an embodiment of the present invention includes: a first semiconductor layer; a first gate electrode; a first gate insulating layer; a first insulating layer above the first gate electrode; a first electrode overlapping the first semiconductor layer, and electrically connected to the first semiconductor layer; a second semiconductor layer above the first insulating layer and made of a different material from the first semiconductor layer; a second gate electrode; a second gate insulating layer; a second electrode overlapping the second semiconductor layer, and electrically connected to the second semiconductor layer; and a first metal nitride layer between the second semiconductor layer and the second electrode, wherein the second semiconductor layer is polycrystalline, and an etching rate of the second semiconductor layer with respect to an etchant including phosphoric acid as a main component is less than 3 nm/min at 40� c.

20250113619. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF_simplified_abstract_(japan display inc.)

Inventor(s): Akihiro HANADA of Tokyo JP for japan display inc., Hajime WATAKABE of Tokyo JP for japan display inc.

IPC Code(s): H01L27/12, G02F1/1368, H01L29/786

CPC Code(s): H10D86/60

Abstract: a semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. the second gate electrode includes a second oxide semiconductor having a polycrystalline structure. the second gate electrode is electrically connected to the first gate electrode.

20250113625. RADIATION DETECTOR_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Toshinari SASAKI of Tokyo JP for japan display inc., Takaya TAMARU of Tokyo JP for japan display inc., Marina MOCHIZUKI of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H01L31/119, H01L25/04, H01L31/02, H01L31/0224

CPC Code(s): H10F30/298

Abstract: a radiation detector according to an embodiment of the present invention includes: a transistor in which an oxide semiconductor layer is used in a channel of the transistor; a photoelectric converting layer connected to the transistor; a wavelength converting layer facing the photoelectric converting layer and capable of emitting visible light based on radioactive rays absorbed by the wavelength converting layer; and an oxide layer in contact with the oxide semiconductor layer between the transistor and the photoelectric converting layer, wherein a thickness of the oxide layer is 50 nm or less.

20250113708. DISPLAY DEVICE AND MOTHER SUBSTRATE FOR DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Naoya IWAHASHI of Tokyo JP for japan display inc., Sho YANAGISAWA of Tokyo JP for japan display inc., Hideyuki TAKAHASHI of Tokyo JP for japan display inc., Ryota TAKASAKI of Tokyo JP for japan display inc., Kazumi IIZAWA of Tokyo JP for japan display inc.

IPC Code(s): H10K59/122

CPC Code(s): H10K59/122

Abstract: according to one embodiment, a display device includes a lower electrode in a display area, a rib layer in the display area and a surrounding area, a first partition above the rib layer in the display area, an organic layer, an upper electrode and a second partition above the rib layer in the surrounding area. the rib layer has a pixel aperture. the organic layer is in contact with the lower electrode through the pixel aperture. the upper electrode covers the organic layer and is in contact with the first partition. each of the partitions includes a lower portion and an upper portion. the second partition includes segments spaced apart from each other. each of the segments has apertures.

20250113709. DISPLAY DEVICE_simplified_abstract_(japan display inc.)

Inventor(s): Hajime WATAKABE of Tokyo JP for japan display inc., Masashi TSUBUKU of Tokyo JP for japan display inc., Kentaro MIURA of Tokyo JP for japan display inc., Masahiro WATABE of Tokyo JP for japan display inc.

IPC Code(s): H10K59/124, H01L27/12, H10K59/121, H10K59/131

CPC Code(s): H10K59/124

Abstract: a display device includes a light-emitting element, a first transistor, and a second transistor, the first transistor includes a first gate electrode, a first insulating film, a first oxide semiconductor layer, a second insulating film, and a first conductive layer provided on the second insulating film, and the second transistor includes the first insulating film, a second oxide semiconductor layer, a second insulating film, and a second gate electrode, wherein an etching rate of the first oxide semiconductor layer and the second semiconductor layer is less than 3 nm/min when the first oxide semiconductor layer and the second semiconductor layer are etched using an etching solution containing phosphoric acid as a main component at 40� c.

Japan Display Inc. patent applications on April 3rd, 2025