International business machines corporation (20250142858). SCANNING SINGLE ELECTRON TRANSISTOR
SCANNING SINGLE ELECTRON TRANSISTOR
Organization Name
international business machines corporation
Inventor(s)
Chloé Bureau-oxton of Adliswil CH
Patrick Harvey-collard of Adliswil CH
SCANNING SINGLE ELECTRON TRANSISTOR
This abstract first appeared for US patent application 20250142858 titled 'SCANNING SINGLE ELECTRON TRANSISTOR
Original Abstract Submitted
embodiments of the present disclosure are directed to a side-gated fin field effect transistor configured as a scanning single electron transistor. in a non-limiting embodiment, a scanning single electron transistor includes a fin formed over a substrate. a source gate is formed over a first portion of the substrate that extends over a sidewall of the fin. a drain gate is formed over a second portion of the substrate that extends over the sidewall of the fin. a plunger gate is formed over a third portion of the substrate that extends over the sidewall of the fin. the plunger gate is positioned between the source gate and the drain gate. the plunger gate is etched back from a topmost surface of the fin such that a quantum dot formed in the fin is not screened by metallic materials in the plunger gate.