International business machines corporation (20250120324). MULTI-TAPERED MRAM DEVICE STRUCTURE
MULTI-TAPERED MRAM DEVICE STRUCTURE
Organization Name
international business machines corporation
Inventor(s)
Oscar Van Der Straten of Guilderland Center NY US
Chih-Chao Yang of Glenmont NY US
Ashim Dutta of Clifton Park NY US
Ailian Zhao of Slingerlands NY US
Pei-I Wang of Clifton Park NY US
Shravana Kumar Katakam of Lehi UT US
MULTI-TAPERED MRAM DEVICE STRUCTURE
This abstract first appeared for US patent application 20250120324 titled 'MULTI-TAPERED MRAM DEVICE STRUCTURE
Original Abstract Submitted
a magnetoresistive random access memory (mram) includes a pillar structure having a bottom electrode and a magnetic tunnel junction (mtj) having a reference layer, a free layer and a tunnel barrier disposed between the reference layer and the free layer. the mtj is disposed on the bottom electrode. a top electrode is disposed on the mtj. the top electrode includes two or more tiers wherein each tier successively includes a smaller footprint.
- International business machines corporation
- Oscar Van Der Straten of Guilderland Center NY US
- Chih-Chao Yang of Glenmont NY US
- Ashim Dutta of Clifton Park NY US
- Wu-Chang Tsai of Albany NY US
- Ailian Zhao of Slingerlands NY US
- Pei-I Wang of Clifton Park NY US
- Shravana Kumar Katakam of Lehi UT US
- H10N50/80
- G11C11/16
- H10B61/00
- H10N50/01
- H10N50/10
- CPC H10N50/80