Stacked FET With Local Contact

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

James P. Mazza of Saratoga Springs NY (US)

Shahrukh Khan of Sandy Hook CT (US)

Iqbal Rashid Saraf of Glenmont NY (US)

Biswanath Senapati of Albany NY (US)

Tenko Yamashita of Schenectady NY (US)

Stacked FET With Local Contact

This abstract first appeared for US patent application 20250072113 titled 'Stacked FET With Local Contact

Original Abstract Submitted

a semiconductor device includes a first source/drain region, a first contact over the first source/drain region, a second source/drain region, and a lateral contact connecting the second source/drain region to a back end of line (beol). portions of the first contact are recessed, and the lateral contact overlaps with the recessed portions of the first contact. the first source/drain region is formed over the second source/drain region.