Intel corporation (20250006738). STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
Organization Name
Inventor(s)
Nicole K. Thomas of Portland OR US
Marko Radosavljevic of Portland OR US
STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
This abstract first appeared for US patent application 20250006738 titled 'STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
Original Abstract Submitted
embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for integrating different materials into the channels for stacked transistor devices, for example in a cfet configuration, where the bottom device is an nmos device and the top device is a pmos device, or vice versa. other embodiments may be described and/or claimed.
