Intel corporation (20240405085). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT STITCHING
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT STITCHING
Organization Name
Inventor(s)
Ehren Mannebach of Tigard OR (US)
Shaun Mills of Hillsboro OR (US)
Joseph D’silva of Hillsboro OR (US)
Mauro J. Kobrinsky of Portland OR (US)
Patrick Morrow of Portland OR (US)
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT STITCHING
This abstract first appeared for US patent application 20240405085 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT STITCHING
Original Abstract Submitted
integrated circuit structures having backside contact stitching are described. in an example, an integrated circuit structure includes a first plurality of horizontally stacked nanowires laterally spaced apart from a second plurality of horizontally stacked nanowires. first and second epitaxial source or drain structure are at respective ends of the first and second pluralities of horizontally stacked nanowires. a conductive contact structure is beneath and in contact with the first epitaxial source or drain structure and the second epitaxial source or drain structure, and the conductive contact structure is continuous between the first and second epitaxial source or drain structures. the conductive contact structure has a first vertical thickness beneath the first and second epitaxial source or drain structures greater than a second vertical thickness in a region between the first and second epitaxial source or drain structures.
