NANORIBBON-BASED TRANSISTOR WITH UNIFORM OXIDE

Organization Name

intel corporation

Inventor(s)

Siddharth Gupta of Hillsboro OR (US)

Robin Chao of Portland OR (US)

Jay Prakash Gupta of Hillsboro OR (US)

Aravind Killampalli of Portland OR (US)

Biswajeet Guha of Hillsboro OR (US)

NANORIBBON-BASED TRANSISTOR WITH UNIFORM OXIDE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240355876 titled 'NANORIBBON-BASED TRANSISTOR WITH UNIFORM OXIDE

The patent application describes nanoribbon-based transistors with a highly uniform oxide layer around semiconductor nanoribbon channels, grown using a high-pressure steam process. This process results in a more uniform oxide layer compared to standard deposition or implantation methods, allowing for greater control over oxide thickness, improved breakdown voltages, and drive currents.

Nanoribbon-based transistors with a highly uniform oxide layer
High-pressure steam process for growing the oxide layer
Self-limiting process for uniform oxide formation
Greater control over oxide thickness
Improved breakdown voltages and drive currents

Potential Applications: - Advanced electronics - Semiconductor industry - Nanotechnology research

Problems Solved: - Lack of uniformity in oxide layers - Limited control over oxide thickness - Inconsistent breakdown voltages and drive currents

Benefits: - Enhanced performance of nanoribbon-based transistors - Improved reliability and stability - Increased efficiency in semiconductor devices

Commercial Applications: Title: "Highly Uniform Oxide Layer for Nanoribbon-Based Transistors" This technology could be utilized in the production of high-performance electronic devices, leading to advancements in computing, telecommunications, and other industries where semiconductor technology is crucial.

Questions about the technology: 1. How does the high-pressure steam process contribute to the uniformity of the oxide layer? - The high-pressure steam process ensures a self-limiting reaction that results in a more consistent oxide layer around the semiconductor nanoribbon channels. 2. What are the potential long-term implications of using nanoribbon-based transistors with a highly uniform oxide layer? - The long-term implications include improved device reliability, increased efficiency, and advancements in semiconductor technology.

Original Abstract Submitted

described herein are nanoribbon-based transistors with a highly uniform oxide layer around semiconductor nanoribbon channels, and a high-pressure steam process for growth the oxide layer. the high-pressure steam process is a self-limiting process that results in a more uniform oxide than standard deposition or implantation methods. the uniformity enables greater control over oxide thickness, with improved breakdown voltages and drive currents.