Intel corporation (20240164080). CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS simplified abstract
CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS
Organization Name
Inventor(s)
Peng Zheng of Portland OR (US)
Varun Mishra of Hillsboro OR (US)
Harold W. Kennel of Portland OR (US)
Eric A. Karl of Portland OR (US)
Tahir Ghani of Portland OR (US)
CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164080 titled 'CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS
Simplified Explanation
The abstract describes a patent application for forksheet transistor devices with depopulated channels in an integrated circuit structure. The structure includes a backbone with two transistor devices, each with a vertical stack of semiconductor channels adjacent to opposite edges of the backbone. The channels have varying dopant concentrations, with the first device having lower dopant concentration in the first semiconductor channels compared to the second semiconductor channel.
- Explanation of the patent/innovation:
- Integrated circuit structure with depopulated channels in forksheet transistor devices - Backbone with two transistor devices, each with a vertical stack of semiconductor channels - Dopant concentration in the semiconductor channels varies within each device
- Potential applications of this technology:
- Advanced semiconductor devices - High-performance integrated circuits - Power-efficient electronics
- Problems solved by this technology:
- Improved transistor performance - Enhanced circuit efficiency - Reduction in power consumption
- Benefits of this technology:
- Higher speed and reliability - Lower power consumption - Increased functionality in electronic devices
- Potential commercial applications of this technology:
- Consumer electronics - Telecommunications - Automotive industry
- Possible prior art:
- Previous transistor designs with depopulated channels - Semiconductor structures with varying dopant concentrations
Questions:
1. How does the varying dopant concentration in the semiconductor channels affect the performance of the transistor devices? 2. What specific advantages does the depopulated channel design offer over traditional transistor structures?
Original Abstract Submitted
embodiments disclosed herein include forksheet transistor devices with depopulated channels. in an example, an integrated circuit structure includes a backbone. a first transistor device includes a first vertical stack of semiconductor channels adjacent to a first edge of the backbone. the first vertical stack of semiconductor channels includes first semiconductor channels and a second semiconductor channel over or beneath the first semiconductor channels. a concentration of a dopant in the first semiconductor channels is less than a concentration of the dopant in the second semiconductor channel. a second transistor device includes a second vertical stack of semiconductor channels adjacent to a second edge of the backbone opposite the first edge.
