Intel Corporation patent applications on 14th August 2025
Patent Applications by Intel Corporation on 14th August 2025
Intel Corporation: 17 patent applications
Intel Corporation has applied for patents in the areas of H10D30/6757 (Technology classification, 3), G06T1/20 (Processor architectures; Processor configuration, e.g. pipelining, 2), G06T15/005 ({General purpose rendering architectures}, 2), H10D88/00 (Technology classification, 2), H10D30/6735 (Technology classification, 2), H10D30/43 (Technology classification, 2), H10D62/121 (Technology classification, 2), H10D84/83 (Technology classification, 2), G06F21/64 (Protecting data integrity, e.g. using checksums, certificates or signatures, 1), G06F21/107 ({License processing; Key processing}, 1)
Top Inventors:
- Jiewen Yao of Shanghai CN (1 patents)
- Subrata Banik of Bangalore IN (1 patents)
- Rajesh Poornachandran of Portland OR US (1 patents)
- Vincent Zimmer of Issaquah WA US (1 patents)
- Anbang Yao of Beijing CN (1 patents)
- Chao Li of Beijing CN (1 patents)
- Yangyuxuan Kang of Beijing CN (1 patents)
- Dongqi Cai of Beijing CN (1 patents)
- Xiaolong Liu of Beijing CN (1 patents)
- Yi Yang of Gilbert AZ US (1 patents)
Patent Applications by Intel Corporation
20250258963. CONFIDENTIAL COMPUTE ARCHITECTURE FOR SILICON INITIALIZATION FOR IP PROTECTION AND ASSURANCE
Abstract: Embodiments are directed to utilizing a confidential compute architecture for silicon initialization for IP protection and assurance. An embodiment of a processing system includes a memory device communicably coupled to hardware components and to memory modules, the memory device to store platform i...
20250259055. NEURAL NETWORK WITH POINT GRID CONVOLUTIONAL LAYER
Abstract: A PGConv layer extract features from grid-structured data samples. The PGConv layer may receive an input feature map including a grid representation of an object, which is generated from a graph representation of the object. The grid representation includes node elements that are arranged in a grid ...
20250259336. INTERLEAVING OF VARIABLE BITRATE STREAMS FOR GPU IMPLEMENTATIONS
Abstract: Interleaving of variable bitrate streams for GPU implementations is described. An example of an apparatus includes one or more processors including a graphic processor, the graphics processor including a super-compression encoder pipeline to provide variable width interleaved coding; and memory for ...
20250259370. LEARNING NEURAL REFLECTANCE SHADERS FROM IMAGES
Abstract: Described herein are techniques for learning neural reflectance shaders from images. A set of one or more machine learning models can be trained to optimize an illumination latent code and a set of reflectance latent codes for an object within a set of input images, such as lighting-based material e...
20250259371. DYNAMIC ROUTING OF TEXTURE LOADS IN GRAPHICS PROCESSING
Abstract: Dynamic routing of texture-load in graphics processing is described. An example of a processor includes one or more processing resources, the one or more processing resources to load a message including a texture load; a texture sampler and a data port; and a message router to route the texture load...
20250259542. ROAD HAZARD COMMUNICATION
Abstract: Apparatus, systems, and/or methods may involve reporting a road hazard. Road hazard data may be collected for an object on a road, which may include automatically generated data from a device associated with the object causing a hazard. The road hazard data may be provided to a service, an applicati...
20250259906. THERMAL PERFORMANCE IN HYBRID BONDED 3D DIE STACKS
Abstract: Hybrid bonded 3D die stacks with improved thermal performance, related apparatuses, systems, and methods of fabrication are disclosed. Such hybrid bonded 3D die stacks include multiple levels of dies including a level of the 3D die stack with one or more integrated circuit dies and one or more therm...
20250259931. GRADUATED ETCH STOP FOR METALLIZATION LAYERS OF INTEGRATED CIRCUITS
Abstract: A graduated etch stop layer is included within a metallization stack of an integrated circuit device. The graduated etch stop layer has a higher concentration of a dopant at an upper portion of the layer than at a lower portion of the layer. The dopant may be oxygen, which reduces capacitance betwee...
20250260167. COIL FOR MOBILE DEVICE CONTEXT-DRIVEN SWITCHING AND WIRELESS CHARGING
Abstract: Apparatus, system and method to provide switchable coils in a computing device, comprising: a plurality of electrically conductive coils to transfer electromagnetic energy; a sensor coupled to a processor, to select a coil from among the plurality of electrically conductive coils; a switch to energi...
20250260498. CONFIGURING MARGINS FOR SINGLE ANTENNA REDUCED CAPABILITY USER EQUIPMENT
Abstract: Embodiments attempt to solve challenges in a wireless communications system. Embodiments describe various techniques, systems, and devices to support relaxed measurement criteria for reduced capability devices in a 3GPP 5G NR system, among other wireless communications systems. Other embodiments are...
20250260990. MITIGATION OF TOKEN REUSE ATTACKS
Abstract: Systems and methods are disclosed for secure token verification. A Network Repository Function (NRF) receives an access token request from a Network Function (NF) Service Consumer and generates an access token with enhanced security claims of authorized producer NF instances and a token issuance tim...
20250261240. SYSTEMS AND METHODS FOR RELAXED PROCESSING TIME FOR REDCAP DEVICES
Abstract: Various embodiments herein provide techniques for reduced capability (RedCap) user equipments (UEs). For example, embodiments relate to a relaxed (longer) timeline requirement associated with a random access procedure and/or other communications of RedCap UEs. The techniques may support existing Red...
20250261300. METHODS AND APPARATUS TO COOL HOTSPOTS IN INTEGRATED CIRCUIT PACKAGES
Abstract: Systems, apparatus, articles of manufacture, and methods to cool hotspots in integrated circuit packages are disclosed. An example apparatus includes a heat generating component associated with a first location in a semiconductor die and a heatsink assembly at a second location in the semiconductor ...
20250261406. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS CONTINUOUS WITH GATE CUT PLUGS
Abstract: Integrated circuit structures having fin isolation regions continuous with gate cut plugs are described. In an example, an integrated circuit structure includes a vertical stack of horizontal nanowires or a fin over a first sub-fin. A gate structure is over the vertical stack of horizontal nanowires...
20250261408. LAYERED THIN FILM MATERIALS FOR TRANSISTOR CHANNELS
Abstract: A thin-film transistor has a channel region with multiple thin-film layers. The transistor has a gate at one side (e.g., at the bottom) and two source/drain contacts on the opposite side (e.g., at the top). One or more channel layers closer to the gate (e.g., lower channel layers) have a higher mobi...
20250261427. INTEGRATED CIRCUIT STRUCTURES HAVING PRE-SPACER DEPOSITION CUT GATES AND ASSOCIATED DEFECT TEST STRUCTURES
Abstract: Integrated circuit structures having pre-spacer-deposition cut gates and associated defect test structures are described. For example, an integrated circuit structure includes a first and second fin or vertical arrangement of horizontal nanowires. First and second gate stacks are over the first and ...
20250261452. SUBSTRATE-LESS SILICON CONTROLLED RECTIFIER (SCR) INTEGRATED CIRCUIT STRUCTURES
Abstract: Substrate-less silicon controlled rectifier (SCR) integrated circuit structures, and methods of fabricating substrate-less silicon controlled rectifier (SCR) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin portion and a se...