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IONQ, INC. (20240403678). IMPROVING QUANTUM GATE INFIDELITY IN TRAPPED ION QUANTUM COMPUTERS

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IMPROVING QUANTUM GATE INFIDELITY IN TRAPPED ION QUANTUM COMPUTERS

Organization Name

IONQ, INC.

Inventor(s)

Ming Li of Silver Spring MD (US)

Kenneth Wright of Berwyn Heights MD (US)

Neal C. Pisenti of Laurel MD (US)

Kristin Marie Beck of Livermore CA (US)

Jason Hieu Van Nguyen of Hyattsville MD (US)

Yunseong Nam of North Bethesda MD (US)

IMPROVING QUANTUM GATE INFIDELITY IN TRAPPED ION QUANTUM COMPUTERS

This abstract first appeared for US patent application 20240403678 titled 'IMPROVING QUANTUM GATE INFIDELITY IN TRAPPED ION QUANTUM COMPUTERS



Original Abstract Submitted

a method of performing a quantum gate operation in an ion trap quantum computing system includes identifying one or more error mechanisms that cause a quantum computational error in a quantum gate operation on a first trapped ion of an ion chain comprising a plurality of trapped ions, wherein the quantum gate operation is performed by applying a first raman laser beam and a second raman laser beam, computing a first amplitude of the first raman laser beam, and a second amplitude of the second raman laser beam such that the effect of the identified one or more error mechanisms is accounted for, and applying the first raman laser beam having the computed first amplitude and the second raman laser beam having the computed second amplitude on the first trapped ion to perform the quantum gate operation on the first trapped ion.

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