Huawei technologies co., ltd. (20250120112). SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE
SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE
Organization Name
Inventor(s)
Krishna Kumar Bhuwalka of Leuven BE
SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE
This abstract first appeared for US patent application 20250120112 titled 'SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE
Original Abstract Submitted
a semiconductor structure and fabrication method is provided for gate all around (gaa) nanosheet devices. the semiconductor structure comprises a substrate, a gate stack on the substrate with a plurality of gate regions and silicon-based channel regions alternatingly arranged one on the other. a length of the gate regions is smaller than a length of the channel regions. thus, pockets are formed on a side of the gate stack, each pocket being arranged next to one gate region and between the two channel regions adjacent to the gate region. further, a silicon-based first contact region extends in a distance to the side of the gate stack, and a silicon-based filler material is arranged between the first contact region and the first side of the gate stack and in each first pocket.