Huawei technologies co., ltd. (20250067605). TRIBOELECTRIC NANOGENERATOR-BASED PRESSURE SENSOR
TRIBOELECTRIC NANOGENERATOR-BASED PRESSURE SENSOR
Organization Name
Inventor(s)
Chuangchuang Liu of Shenzhen (CN)
TRIBOELECTRIC NANOGENERATOR-BASED PRESSURE SENSOR
This abstract first appeared for US patent application 20250067605 titled 'TRIBOELECTRIC NANOGENERATOR-BASED PRESSURE SENSOR
Original Abstract Submitted
a sensor includes: two friction layers and at least one electrode layer. the two friction layers are respectively made of materials with different electron gain and loss capabilities, and a surface of at least one friction layer includes a multi-level micro-nano structure, so that when there is pressure, equal-quantity and opposite net charges corresponding to the applied pressure are induced on the two friction layers. the multi-level micro-nano structure includes micro-nano columnar structures with at least two different heights. the electrode layer is configured to generate a current based on the net charges. the multi-level structure with different heights is designed.