Denso corporation (20250105081). SEMICONDUCTOR DEVICE AND POWER CONTROL UNIT
SEMICONDUCTOR DEVICE AND POWER CONTROL UNIT
Organization Name
Inventor(s)
Keita Fukutani of Kariya-city JP
Masanori Miyata of Kariya-city JP
SEMICONDUCTOR DEVICE AND POWER CONTROL UNIT
This abstract first appeared for US patent application 20250105081 titled 'SEMICONDUCTOR DEVICE AND POWER CONTROL UNIT
Original Abstract Submitted
a semiconductor device includes: a semiconductor substrate having an active region and an outer peripheral region in which a voltage withstanding structure is formed to surround the active region; a temperature sensor configured to detect a temperature of the semiconductor substrate in the outer peripheral region; and a conductive spacer disposed on the active region. the temperature sensor is positioned not to overlap the conductive spacer in the thickness direction. the temperature sensor is positioned closer to a center of the semiconductor substrate in an orthogonal direction perpendicular to the thickness direction than the voltage withstanding structure is.