Cisco technology, inc. (20250015213). FORMATION OF PHOTODIODE ABSORPTION REGION USING A SACRIFICIAL REGION
FORMATION OF PHOTODIODE ABSORPTION REGION USING A SACRIFICIAL REGION
Organization Name
Inventor(s)
Vipulkumar K. Patel of Breinigsville PA (US)
Xunyuan Zhang of Mechanicsburg PA (US)
FORMATION OF PHOTODIODE ABSORPTION REGION USING A SACRIFICIAL REGION
This abstract first appeared for US patent application 20250015213 titled 'FORMATION OF PHOTODIODE ABSORPTION REGION USING A SACRIFICIAL REGION
Original Abstract Submitted
the present disclosure relates to a photodiode and method of forming the photodiode. the photodiode includes a doped layer and an absorption region positioned on the doped layer. the absorption region includes a base region contacting the doped layer, a first facet region positioned on the base region, and a second facet region positioned on the first facet region. the first facet region includes (i) a first tapered surface and a second tapered surface extending from the base region and (ii) a first step region and a second step region extending laterally from the first tapered surface and the second tapered surface, respectively. the second facet region includes a third tapered surface extending from the first step region and a fourth tapered surface extending from the second step region.