PIE PHOTODETECTOR

Organization Name

Inventor(s)

PIE PHOTODETECTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240243214 titled 'PIE PHOTODETECTOR

Simplified Explanation: The patent application describes a photodetector made of a semiconductor disk with specific doped regions and absorption regions to efficiently absorb optical signals.

Key Features and Innovation:

Semiconductor disk design
Specific doped regions for efficient signal absorption
Absorption regions along the inner circumference of the disk

Potential Applications: This technology can be used in:

Optical communication systems
Photovoltaic devices
Remote sensing applications

Problems Solved:

Efficient absorption of optical signals
Enhanced sensitivity in detecting light signals

Benefits:

Improved signal detection accuracy
Higher efficiency in signal absorption
Enhanced performance in optical devices

Commercial Applications: Potential commercial uses include:

Optical communication equipment manufacturing
Solar energy technology development
Remote sensing device production

Prior Art: Readers can explore prior art related to semiconductor photodetectors and signal absorption technologies in the field of optoelectronics.

Frequently Updated Research: Stay updated on advancements in semiconductor photodetectors and signal absorption technologies for potential improvements in efficiency and performance.

Questions about Semiconductor Photodetectors: 1. What are the key components of a semiconductor photodetector? 2. How does the design of a semiconductor disk enhance signal absorption efficiency?

Original Abstract Submitted

a photodetector and method of making a photodetector are disclosed. an apparatus includes a semiconductor disk, a first doped region, and a first absorption region. the first doped region is disposed within the semiconductor disk such that the first doped region extends across a center of the semiconductor disk. the first doped region has a first doping type. the first absorption region is disposed on the first doped region such that a portion of the first doped region is positioned between the center of the semiconductor disk and the first absorption region along a radius of the semiconductor disk. the first absorption region includes a second doped region with a second doping type different from the first doping type. the first absorption region is arranged to absorb an optical signal as the optical signal travels along an inner circumference of the semiconductor disk.