Category:Yongbo Xu

Yongbo Xu

Executive Summary

Yongbo Xu is an inventor who has filed 2 patents. Their primary areas of innovation include COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion (1 patents), COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion (1 patents), to produce devices, e.g. integrated circuits, each consisting of a plurality of components (1 patents), and they have worked with companies such as United Semiconductor (Xiamen) Co., Ltd. (2 patents). Their most frequent collaborators include (2 collaborations), (2 collaborations), (1 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• C23C14/3414 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• C23C14/14 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• H01L21/823828 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L21/2855 (from a gas or vapour, e.g. condensation): 1 patents
• H01L21/76829 ({characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}): 1 patents
• H01L21/76877 ({Thin films associated with contacts of capacitors}): 1 patents
• H01L29/66545 ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 1 patents

Companies

List of Companies

• United Semiconductor (Xiamen) Co., Ltd.: 2 patents

Collaborators

• Shouguo Zhang (2 collaborations)
• Wen Yi Tan (2 collaborations)
• Ching-Shu Lo (1 collaborations)