Category:Yi-Hsin Nien of Hsinchu (TW)
Yi-Hsin Nien
Yi-Hsin Nien from Hsinchu (TW) has applied for patents in technology areas such as H10B10/00, G03F1/70, G06F30/392 with taiwan semiconductor manufacturing company, ltd..
Patents
Pages in category "Yi-Hsin Nien of Hsinchu (TW)"
The following 8 pages are in this category, out of 8 total.
1
- 18155932. FOUR CPP WIDE MEMORY CELL WITH BURIED POWER GRID, AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158076. MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18430661. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18490922. SEMICONDUCTOR MEMORY DEVICES WITH FLYING BIT LINES AND METHODS OF MANUFACTURING THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18601706. MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
T
- Taiwan semiconductor manufacturing company, ltd. (20240179884). SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240212749). MEMORY DEVICE HAVING A NEGATIVE VOLTAGE CIRCUIT simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250063709). MEMORY CELL WITH BURIED POWER GRID, AND METHOD OF FABRICATING SAME