Category:Xia Li of San Diego CA (US)
Xia Li
Xia Li from San Diego CA (US) has applied for patents in technology areas such as H01L27/092, H01L21/8238, H01L29/06 with qualcomm incorporated.
Patents
Pages in category "Xia Li of San Diego CA (US)"
The following 28 pages are in this category, out of 28 total.
1
- 17818048. MONOLITHIC THREE-DIMENSIONAL (3D) COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) CIRCUITS AND METHOD OF MANUFACTURE simplified abstract (QUALCOMM Incorporated)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18068992. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract (QUALCOMM Incorporated)
- 18189442. SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract (QUALCOMM Incorporated)
- 18190024. BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES simplified abstract (QUALCOMM Incorporated)
- 18334301. FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHANCE DRIVER CURRENT AND PERFORMANCE (QUALCOMM Incorporated)
- 18336269. THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CUTS TO ENHANCE CARRIER MOBILITY AND RELATED FABRICATION METHODS (QUALCOMM Incorporated)
- 18340556. PACKAGE COMPRISING SIDEWALL INTERCONNECTS CONFIGURED FOR POWER ROUTING (QUALCOMM Incorporated)
- 18340733. PACKAGE COMPRISING OPTICAL INTEGRATED DEVICE simplified abstract (QUALCOMM Incorporated)
- 18455511. VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT DEVICE INTEGRATION (QUALCOMM Incorporated)
- 18607170. PACKAGE COMPRISING AN OPTICAL INTEGRATED DEVICE simplified abstract (QUALCOMM Incorporated)
Q
- Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract
- Qualcomm incorporated (20240105688). PACKAGE COMPRISING AN INTEGRATED DEVICE, A CHIPLET AND A METALLIZATION PORTION simplified abstract
- Qualcomm incorporated (20240136357). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240204109). COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract
- Qualcomm incorporated (20240234418). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract
- Qualcomm incorporated (20240319455). PACKAGE COMPRISING AN OPTICAL INTEGRATED DEVICE simplified abstract
- Qualcomm incorporated (20240321631). BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES simplified abstract
- Qualcomm incorporated (20240321849). PACKAGE COMPRISING OPTICAL INTEGRATED DEVICE simplified abstract
- Qualcomm incorporated (20240321965). SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract
- Qualcomm incorporated (20240379679). THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS simplified abstract
- Qualcomm incorporated (20240413219). FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK FUNCTION METAL LAYERS FOR STRAIN EFFECT AND RELATED FABRICATION METHODS
- Qualcomm incorporated (20240421157). THREE-DIMENSIONAL (3D) FIELD EFFECT TRANSISTORS (FETS) WITH GATE CUTS TO ENHANCE CARRIER MOBILITY AND RELATED FABRICATION METHODS
- Qualcomm incorporated (20240421214). FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHANCE DRIVER CURRENT AND PERFORMANCE
- Qualcomm incorporated (20240429141). PACKAGE COMPRISING SIDEWALL INTERCONNECTS CONFIGURED FOR POWER ROUTING
- Qualcomm incorporated (20250072105). VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT DEVICE INTEGRATION