Category:Sudipto Naskar of Portland OR US
Appearance
Sudipto Naskar
Sudipto Naskar from Portland OR US has applied for patents in technology areas such as H01L29/06, H01L21/8238, H01L27/092 with intel corporation.
Patents
Pages in category "Sudipto Naskar of Portland OR US"
The following 11 pages are in this category, out of 11 total.
1
- 18372970. DIFFERENTIATED CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18374599. TRENCH CONTACT STRUCTURE WITH AIRGAP SPACER (INTEL CORPORATION)
- 18374603. SELECTIVE DIELECTRIC GROWTH FOR DIRECTING CONTACT TO GATE OR CONTACT TO TRENCH CONTACT (INTEL CORPORATION)
- 18402595. CAPACITOR ARCHITECTURES IN SEMICONDUCTOR DEVICES (Intel Corporation)
- 18467906. AIR GAP INSULATION IN PLACE OF GATE SPACERS (Intel Corporation)
I
- Intel corporation (20250006812). N-TYPE TRANSISTOR FABRICATION IN COMPLEMENTARY FET (CFET) DEVICES
- Intel corporation (20250098242). AIR GAP INSULATION IN PLACE OF GATE SPACERS
- Intel corporation (20250105148). DIFFERENTIATED CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250112037). SELECTIVE DIELECTRIC GROWTH FOR DIRECTING CONTACT TO GATE OR CONTACT TO TRENCH CONTACT
- Intel corporation (20250113581). TRENCH CONTACT STRUCTURE WITH AIRGAP SPACER
- Intel corporation (20250120100). CAPACITOR ARCHITECTURES IN SEMICONDUCTOR DEVICES
(Ad) Transform your business with AI in minutes, not months
✓
Custom AI strategy tailored to your specific industry needs
✓
Step-by-step implementation with measurable ROI
✓
5-minute setup that requires zero technical skills
Trusted by 1,000+ companies worldwide