Category:Junjing Bao of San Diego CA (US)
Junjing Bao
Junjing Bao from San Diego CA (US) has applied for patents in technology areas such as H01L27/092, H01L21/8238, H01L29/06 with qualcomm incorporated.
Patents
Pages in category "Junjing Bao of San Diego CA (US)"
The following 26 pages are in this category, out of 26 total.
1
- 17478539. INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BETWEEN VERTICALLY-ADJACENT INTERCONNECT LAYERS FOR REDUCED COUPLING RESISTANCE, AND RELATED METHODS simplified abstract (QUALCOMM Incorporated)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17933683. SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS simplified abstract (QUALCOMM Incorporated)
- 18068992. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract (QUALCOMM Incorporated)
- 18098633. N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE CUT FOR PERFORMANCE ENHANCED FINFET simplified abstract (QUALCOMM Incorporated)
- 18166403. SELF-ALIGNED SMALL CONTACT STRUCTURE simplified abstract (QUALCOMM Incorporated)
- 18178248. TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/DRAIN SPACES simplified abstract (QUALCOMM Incorporated)
- 18189045. ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS simplified abstract (QUALCOMM Incorporated)
- 18189442. SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract (QUALCOMM Incorporated)
- 18189482. LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED METHOD OF FABRICATION simplified abstract (QUALCOMM Incorporated)
- 18190024. BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES simplified abstract (QUALCOMM Incorporated)
- 18455511. VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT DEVICE INTEGRATION (QUALCOMM Incorporated)
- 18590242. INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BETWEEN VERTICALLY-ADJACENT INTERCONNECT LAYERS FOR REDUCED COUPLING RESISTANCE, AND RELATED METHODS simplified abstract (QUALCOMM Incorporated)
Q
- Qualcomm incorporated (20240096698). SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS simplified abstract
- Qualcomm incorporated (20240096964). VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract
- Qualcomm incorporated (20240203866). INTEGRATED CIRCUITS (ICs) EMPLOYING DIRECTLY COUPLED METAL LINES BETWEEN VERTICALLY-ADJACENT INTERCONNECT LAYERS FOR REDUCED COUPLING RESISTANCE, AND RELATED METHODS simplified abstract
- Qualcomm incorporated (20240204109). COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract
- Qualcomm incorporated (20240243131). N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE CUT FOR PERFORMANCE ENHANCED FINFET simplified abstract
- Qualcomm incorporated (20240266217). SELF-ALIGNED SMALL CONTACT STRUCTURE simplified abstract
- Qualcomm incorporated (20240297218). TRANSISTORS HAVING DIFFERENT CHANNEL LENGTHS AND COMPARABLE SOURCE/DRAIN SPACES simplified abstract
- Qualcomm incorporated (20240321631). BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES simplified abstract
- Qualcomm incorporated (20240321860). ROW CELL CIRCUITS WITH ABRUPT DIFFUSION REGION WIDTH TRANSITIONS simplified abstract
- Qualcomm incorporated (20240321861). LOGIC CIRCUITS INCLUDING CIRCUITS OF DIFFERENT HEIGHTS AND RELATED METHOD OF FABRICATION simplified abstract
- Qualcomm incorporated (20240321965). SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract
- Qualcomm incorporated (20240379679). THREE-DIMENSIONAL (3D) DUAL COMPLEMENTARY CIRCUIT STRUCTURES AND RELATED FABRICATION METHODS simplified abstract
- Qualcomm incorporated (20250072105). VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT DEVICE INTEGRATION