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Category:Chih-Sung Yang of Hsinchu City TW

From WikiPatents

Chih-Sung Yang

Chih-Sung Yang from Hsinchu City TW has applied for patents in technology areas such as H01L29/423, H01L21/8238, H01L27/092 with qualcomm incorporated.

Patents

BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT TRANSISTOR (FET) (20250133772)

Pages in category "Chih-Sung Yang of Hsinchu City TW"

The following 2 pages are in this category, out of 2 total.

1

18493634. BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT TRANSISTOR (FET) (QUALCOMM Incorporated)

Q

Qualcomm incorporated (20250133772). BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT TRANSISTOR (FET)

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