Canon kabushiki kaisha (20240307958). FRICTION MEMBER AND METHOD FOR MANUFACTURING SAME simplified abstract
FRICTION MEMBER AND METHOD FOR MANUFACTURING SAME
Organization Name
Inventor(s)
SHINGO Eguchi of Kanagawa (JP)
FRICTION MEMBER AND METHOD FOR MANUFACTURING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240307958 titled 'FRICTION MEMBER AND METHOD FOR MANUFACTURING SAME
The abstract describes a friction member consisting of a stainless-steel-based sintered body with pores filled with a silicone-based resin material.
- The friction member includes a stainless-steel-based sintered body with pores.
- A resin material, specifically a silicone-based resin, is present inside the pores.
- The resin material has a maximum absorption peak intensity ratio in a specific range based on an infrared spectroscopic analysis.
Potential Applications: - Automotive industry for brake pads or clutch plates. - Industrial machinery for friction components. - Aerospace industry for high-performance applications.
Problems Solved: - Improved friction performance. - Enhanced durability and wear resistance. - Better heat dissipation.
Benefits: - Increased longevity of friction components. - Enhanced performance under high temperatures. - Reduced maintenance and replacement costs.
Commercial Applications: "Silicone-Based Resin Friction Members for High-Performance Automotive and Industrial Applications"
Questions about the technology: 1. How does the silicone-based resin improve the performance of the friction member? 2. What are the specific advantages of using a stainless-steel-based sintered body in this application?
Original Abstract Submitted
a friction member includes a stainless-steel-based sintered body having a pore, and a resin material that is present in at least one portion of an inside of the pore, wherein the resin material is a silicone-based resin material, and has a maximum absorption peak intensity ratio ia/ib of 0.10 or more in a spectrum acquired based on an infrared spectroscopic analysis, where ia is a maximum absorption peak intensity caused by stretching vibration of si—h bond in a range of 2079 cmto 2415 cm, and ib is a maximum absorption peak intensity caused by stretching vibration of si—o—si bond in a range of 1000 cmto 1070 cm.