PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE

Organization Name

Inventor(s)

PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240243157 titled 'PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE

The abstract describes a photoelectric conversion element in a semiconductor layer with different semiconductor regions to multiply signal charges.

First semiconductor region of a first conductivity type in contact with the first surface
Second semiconductor region of a second conductivity type closer to the second surface
Third semiconductor region closer to the second surface than the second semiconductor region
Avalanche photodiode configuration to multiply signal charges in the third semiconductor region
Varying distance between boundary surfaces in different portions of the semiconductor regions

Potential Applications: - Solar panels - Optical sensors - Imaging devices

Problems Solved: - Efficient signal charge multiplication - Improved photoelectric conversion

Benefits: - Higher sensitivity - Enhanced performance in low light conditions

Commercial Applications: Title: "Advanced Photoelectric Conversion Technology for Enhanced Solar Panels" This technology can be used in the development of more efficient solar panels for residential and commercial use, leading to increased energy production and cost savings.

Questions about the technology: 1. How does the varying distance between boundary surfaces impact the performance of the photoelectric conversion element?

  - The varying distance helps optimize the charge multiplication process, leading to improved efficiency.

2. What are the specific conductivity types used in the different semiconductor regions of the element?

  - The first semiconductor region is of a first conductivity type, while the second semiconductor region is of a second conductivity type.

Original Abstract Submitted

a photoelectric conversion element is provided in a semiconductor layer having a first and second surfaces and includes a first semiconductor region of a first conductivity type in contact with the first surface, a second semiconductor region of a second conductivity type disposed closer to the second surface than the first semiconductor region, and a third semiconductor region disposed closer to the second surface than the second semiconductor region. the first and second semiconductor regions constitute an avalanche photodiode configured to multiply signal charges generated in the third semiconductor region. a distance between a boundary surface on a side of the second semiconductor region of the first semiconductor region and a boundary surface on a side of the first semiconductor region of the second semiconductor region is minimum in a first portion, and is wider in a second portion different from the first portion than in the first portion.