Applied materials, inc. (20250125157). OPTIMUM MATERIAL STACKS FOR SEMICONDUCTOR CONTACTS
OPTIMUM MATERIAL STACKS FOR SEMICONDUCTOR CONTACTS
Organization Name
Inventor(s)
Michael Haverty of Santa Clara CA US
Avgerinos V. Gelatos of Scotts Valley CA US
Gaurav Thareja of Santa Clara CA US
Lauren Mary Bagby of Palo Alto CA US
Lakmal C. Kalutarage of San Jose CA US
Jeffrey W. Anthis of San Jose CA US
Archana Kumar of Mountain View CA US
OPTIMUM MATERIAL STACKS FOR SEMICONDUCTOR CONTACTS
This abstract first appeared for US patent application 20250125157 titled 'OPTIMUM MATERIAL STACKS FOR SEMICONDUCTOR CONTACTS
Original Abstract Submitted
the methods of the present disclosure enable formation of highly conductive contacts that facilitate in increasing the device speed and lowering the operating voltages of semiconductor devices such as, but not limited to, metal-on-semiconductor (mos) transistors and the like. in one embodiment, the methods create the optimal contacts, useful in n type or p type mos devices, by forming metal-insulator-semiconductor (mis) contact structure or a non-stoichiometric layer contact structure. it is noted that n type or p type contacts require different work function metals to achieve a low schottky barrier height (sbh).
- Applied materials, inc.
- Michael Haverty of Santa Clara CA US
- Avgerinos V. Gelatos of Scotts Valley CA US
- Gaurav Thareja of Santa Clara CA US
- Lauren Mary Bagby of Palo Alto CA US
- Lakmal C. Kalutarage of San Jose CA US
- Jeffrey W. Anthis of San Jose CA US
- Archana Kumar of Mountain View CA US
- H01L21/3205
- H01L21/48
- CPC H01L21/32053