Applied materials, inc. (20250125145). METHODS TO IMPROVE OXIDE SIDEWALL QUALITY
METHODS TO IMPROVE OXIDE SIDEWALL QUALITY
Organization Name
Inventor(s)
Deenesh Padhi of Saratoga CA US
Woongsik Nam of Santa Clara CA US
METHODS TO IMPROVE OXIDE SIDEWALL QUALITY
This abstract first appeared for US patent application 20250125145 titled 'METHODS TO IMPROVE OXIDE SIDEWALL QUALITY
Original Abstract Submitted
exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. a substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. the methods may include generating plasma effluents of the silicon-containing precursor in the processing region. the methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. methods include soaking the deposited silicon-containing material with a second silicon-containing material.