Applied materials, inc. (20250120061). 3D DRAM WITH ENLARGE-LESS TRIM
3D DRAM WITH ENLARGE-LESS TRIM
Organization Name
Inventor(s)
Chang Seok Kang of Santa Clara CA US
3D DRAM WITH ENLARGE-LESS TRIM
This abstract first appeared for US patent application 20250120061 titled '3D DRAM WITH ENLARGE-LESS TRIM
Original Abstract Submitted
embodiments of the present technology may include semiconductor processing methods and systems. methods and systems may include providing a substrate to a processing region of a semiconductor processing chamber, where the substrate includes one or more alternating pairs of a semiconductor material layer and a sacrificial material layer. methods include forming one or more vertically extending features through the one or more alternating pairs of semiconductor material layer and sacrificial material layer, forming one or more sidewalls having alternating exposed lateral ends of the semiconductor material and the sacrificial material. methods include forming a protective material layer over the exposed lateral ends of the semiconductor material layer. methods include laterally recessing at least a portion of the sacrificial material layer from the one or more vertically extending features and trimming a portion of the semiconductor material layer adjacent to the one or more vertically extending features.