Applied materials, inc. (20250113577). SEMICONDUCTOR AIRGAP SPACER AND FABRICATION METHODS
SEMICONDUCTOR AIRGAP SPACER AND FABRICATION METHODS
Organization Name
Inventor(s)
Veeraraghavan S. Basker of Fremont CA US
Sai Hooi Yeong of Cupertino CA US
El Mehdi Bazizi of San Jose CA US
Benjamin Colombeau of San Jose CA US
Balasubramanian Pranatharthiharan of San Jose CA US
SEMICONDUCTOR AIRGAP SPACER AND FABRICATION METHODS
This abstract first appeared for US patent application 20250113577 titled 'SEMICONDUCTOR AIRGAP SPACER AND FABRICATION METHODS
Original Abstract Submitted
embodiments of the disclosure advantageously provide semiconductor devices, fin field effect transistors (finfets) in particular, and methods of manufacturing such devices having improved effective capacitance (c). the finfets include a gate structure in which airgaps are provided by recessing a high-k material layer disposed between the gate structure and a spacer layer, thereby reducing the effective dielectric constant in the high-k dielectric layer and improving effective capacitance (c) of the device.
- Applied materials, inc.
- Veeraraghavan S. Basker of Fremont CA US
- Sai Hooi Yeong of Cupertino CA US
- Ashish Pal of San Ramon CA US
- El Mehdi Bazizi of San Jose CA US
- Benjamin Colombeau of San Jose CA US
- Balasubramanian Pranatharthiharan of San Jose CA US
- H01L29/66
- H01L21/8238
- H01L27/092
- H01L29/06
- H01L29/423
- H01L29/775
- H01L29/78
- H01L29/786
- CPC H10D64/021