Applied materials, inc. (20250006518). BOTTOM ETCH PROCESS FOR CONTACT PLUG ANCHORING
BOTTOM ETCH PROCESS FOR CONTACT PLUG ANCHORING
Organization Name
Inventor(s)
Shiyu Yue of Santa Clara CA US
Zhimin Qi of Santa Clara CA US
Sahil Jaykumar Patel of Sunnyvale CA US
Aixi Zhang of Santa Clara CA US
Bingqian Liu of Santa Clara CA US
Cong Trinh of Santa Clara CA US
Xianmin Tang of San Jose CA US
Hayrensa Ablat of Santa Clara CA US
BOTTOM ETCH PROCESS FOR CONTACT PLUG ANCHORING
This abstract first appeared for US patent application 20250006518 titled 'BOTTOM ETCH PROCESS FOR CONTACT PLUG ANCHORING
Original Abstract Submitted
embodiments herein relate to a method, semiconductor device structures, and multi-chamber processing system for exposing a semiconductor device structure to an oxidizing plasma to form an oxide layer on at least one electrical connection formed in at least one feature formed within a dielectric layer of the semiconductor device structure, performing an etch process to remove the oxide layer and form an etch recess between a portion of the electrical connection and the dielectric layer at least a portion of the etch recess extends underneath at least a portion of the dielectric layer, and filling the at least one feature and the etch recess with a metal material.
- Applied materials, inc.
- Shiyu Yue of Santa Clara CA US
- Wei Lei of San Jose CA US
- Yu Lei of Belmont CA US
- Ju Hyun Oh of San Jose CA US
- Zhimin Qi of Santa Clara CA US
- Sahil Jaykumar Patel of Sunnyvale CA US
- Yi Xu of San Jose CA US
- Aixi Zhang of Santa Clara CA US
- Bingqian Liu of Santa Clara CA US
- Cong Trinh of Santa Clara CA US
- Xianmin Tang of San Jose CA US
- Hayrensa Ablat of Santa Clara CA US
- H01L21/67
- H01L21/321
- H01L21/768
- H01L23/532
- CPC H01L21/67034
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